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ComSIT Distribution GmbH
Visit SiteZXMC10A816N8TC
Power Field-Effect Transistor, 1.7A I(D), 100V, 0.23ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
Product Attributes
TYPE
DESCRIPTION
Case/Package
SOIC
Continuous Drain Current (ID)
2 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
235 mΩ
Drain to Source Voltage (Vdss)
100 V
Fall Time
12 ns
Gate to Source Voltage (Vgs)
20 V
Height
1.5 mm
Input Capacitance
497 pF
Length
4.95 mm
Max Operating Temperature
150 °C
Max Power Dissipation
1.8 W
Min Operating Temperature
-55 °C
Mount
Surface Mount
Number of Channels
2
Number of Elements
2
Number of Pins
8
Packaging
Tape and Reel
Power Dissipation
2.1 W
Radiation Hardening
No
Rds On Max
230 mΩ
REACH SVHC
No SVHC
Rise Time
5.2 ns
RoHS
Compliant
Schedule B
8541290080
Turn-Off Delay Time
20 ns
Turn-On Delay Time
4.3 ns
Weight
73.992255 mg
Width
3.95 mm
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