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ComSIT Distribution GmbH
Visit SiteSTGE50NC60VD
Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel
Product Attributes
TYPE
DESCRIPTION
Collector Emitter Breakdown Voltage
600 V
Collector Emitter Saturation Voltage
2.5 V
Collector Emitter Voltage (VCEO)
600 V
Element Configuration
Single
Height
12.2 mm
Input
Standard
Input Capacitance
4.55 nF
Lead Free
Lead Free
Length
38.2 mm
Max Breakdown Voltage
600 V
Max Collector Current
80 A
Max Operating Temperature
150 °C
Max Power Dissipation
260 W
Min Operating Temperature
-55 °C
Mount
Chassis Mount, Screw, Surface Mount
NTC Thermistor
No
Number of Pins
4
Power Dissipation
260 W
Radiation Hardening
No
REACH SVHC
No SVHC
Rise Time
17 ns
RoHS
Compliant
Turn-Off Delay Time
140 ns
Turn-On Delay Time
43 ns
Width
24.15 mm
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