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onsemi FDS6681Z

FDS6681Z

Product Attributes
TYPE
DESCRIPTION
Case/Package
SOIC
Contact Plating
Tin
Continuous Drain Current (ID)
20 A
Current Rating
-20 A
Drain to Source Breakdown Voltage
-30 V
Drain to Source Resistance
3.8 mΩ
Drain to Source Voltage (Vdss)
-30 V
Dual Supply Voltage
30 V
Element Configuration
Single
Fall Time
380 ns
Gate to Source Voltage (Vgs)
25 V
Height
1.5 mm
Input Capacitance
7.54 nF
Lead Free
Lead Free
Length
5 mm
Lifecycle Status
Production (Last Updated: 2 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 2 years ago)
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
2.5 W
Min Operating Temperature
-55 °C
Mount
Surface Mount
Nominal Vgs
1.8 V
Number of Channels
1
Number of Elements
1
Number of Pins
8
Packaging
Cut Tape
Power Dissipation
2.5 W
Radiation Hardening
No
Rds On Max
4.6 mΩ
REACH SVHC
No SVHC
Resistance
4.6 mΩ
Rise Time
9 ns
RoHS
Compliant
Schedule B
8541290080
Termination
SMD/SMT
Threshold Voltage
-1.8 V
Turn-Off Delay Time
660 ns
Turn-On Delay Time
20 ns
Voltage Rating (DC)
-30 V
Weight
130 mg
Width
4 mm
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