Products
Distributors
Manufacturers
- Intel
- Samsung
- Texas Instruments
- STMicroelectronics
- Infineon
- NXP Semiconductors
- Microchip
- Analog Devices
- onsemi
- Skyworks Solutions
- Avago
- Marvell
- Omnivision Technologies
- ROHM
- Seoul Semiconductor
- Silego
- Cirrus Logic
- Silicon Labs
- Lattice Semiconductor
- Cypress Semiconductor
- Toshiba
- Mitsubishi
- Panasonic
- Sharp
- Omnetics
- Laird
- TDK-Lambda
- WAGO
- All Distributors
SI7322DN-T1-GE3
Product Attributes
TYPE
DESCRIPTION
Continuous Drain Current (ID)
5.5 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
58 mΩ
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Fall Time
10 ns
Gate to Source Voltage (Vgs)
20 V
Height
1.04 mm
Input Capacitance
750 pF
Lead Free
Lead Free
Length
3.05 mm
Max Operating Temperature
150 °C
Max Power Dissipation
3.8 W
Min Operating Temperature
-55 °C
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Number of Pins
8
Power Dissipation
3.8 W
Radiation Hardening
No
Rds On Max
58 mΩ
REACH SVHC
Unknown
Resistance
58 mΩ
Rise Time
10 ns
RoHS
Compliant
Schedule B
8541290080
Threshold Voltage
4.4 V
Turn-Off Delay Time
12 ns
Turn-On Delay Time
10 ns
Width
3.05 mm
Similar Products