Products
Distributors
Manufacturers
- Intel
- Samsung
- Texas Instruments
- STMicroelectronics
- Infineon
- NXP Semiconductors
- Microchip
- Analog Devices
- onsemi
- Skyworks Solutions
- Avago
- Marvell
- Omnivision Technologies
- ROHM
- Seoul Semiconductor
- Silego
- Cirrus Logic
- Silicon Labs
- Lattice Semiconductor
- Cypress Semiconductor
- Toshiba
- Mitsubishi
- Panasonic
- Sharp
- Omnetics
- Laird
- TDK-Lambda
- WAGO
- All Distributors
IRFD110
Product Attributes
TYPE
DESCRIPTION
Case/Package
DIP
Contact Plating
Lead, Tin
Continuous Drain Current (ID)
1 A
Current Rating
1 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
540 mΩ
Drain to Source Voltage (Vdss)
100 V
Fall Time
16 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
180 pF
Lead Free
Contains Lead
Max Operating Temperature
175 °C
Max Power Dissipation
1.3 W
Min Operating Temperature
-55 °C
Mount
Through Hole
Number of Elements
1
Number of Pins
4
Packaging
Bulk
Power Dissipation
1.3 W
Radiation Hardening
No
Rds On Max
540 mΩ
Resistance
540 mΩ
Rise Time
16 ns
RoHS
Compliant
Turn-Off Delay Time
15 ns
Turn-On Delay Time
6.9 ns
Voltage Rating (DC)
100 V
Similar Products