Products
Distributors
Manufacturers
- Intel
- Samsung
- Texas Instruments
- STMicroelectronics
- Infineon
- NXP Semiconductors
- Microchip
- Analog Devices
- onsemi
- Skyworks Solutions
- Avago
- Marvell
- Omnivision Technologies
- ROHM
- Seoul Semiconductor
- Silego
- Cirrus Logic
- Silicon Labs
- Lattice Semiconductor
- Cypress Semiconductor
- Toshiba
- Mitsubishi
- Panasonic
- Sharp
- Omnetics
- Laird
- TDK-Lambda
- WAGO
- All Distributors
Benley Electronics
Visit SiteSD12CT1G
Product Attributes
TYPE
DESCRIPTION
Breakdown Voltage
13.3 V
Capacitance
64 pF
Clamping Voltage
19 V
Composition
Zener
Contact Plating
Tin
Depth
1.25 mm
Direction
Bidirectional
Element Configuration
Single
Height
1.1 mm
Lead Free
Lead Free
Leakage Current
1 µA
Length
1.7 mm
Lifecycle Status
NRND (Last Updated: 2 years ago)
Manufacturer Lifecycle Status
ACTIVE, NOT REC (Last Updated: 2 years ago)
Max Breakdown Voltage
13.3 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
200 mW
Max Surge Current
15 A
Min Breakdown Voltage
13.3 V
Min Operating Temperature
-65 °C
Mount
Surface Mount
Number of Bidirectional Channels
1
Number of Channels
1
Number of Elements
1
Number of Pins
2
Operating Supply Voltage
12 V
Packaging
Cut Tape
Peak Pulse Current
5 A
Peak Pulse Power
350 W
Polarity
Bidirectional
Power Dissipation
350 W
Power Line Protection
No
Power Rating
350 W
Radiation Hardening
No
REACH SVHC
No SVHC
Reverse Breakdown Voltage
13.3 V
Reverse Standoff Voltage
12 V
RoHS
Compliant
Termination
SMD/SMT
Test Current
1 mA
Voltage Rating (DC)
12 V
Width
1.25 mm
Working Voltage
12 V
Similar Products