Products
Distributors
Manufacturers
- Intel
- Samsung
- Texas Instruments
- STMicroelectronics
- Infineon
- NXP Semiconductors
- Microchip
- Analog Devices
- onsemi
- Skyworks Solutions
- Avago
- Marvell
- Omnivision Technologies
- ROHM
- Seoul Semiconductor
- Silego
- Cirrus Logic
- Silicon Labs
- Lattice Semiconductor
- Cypress Semiconductor
- Toshiba
- Mitsubishi
- Panasonic
- Sharp
- Omnetics
- Laird
- TDK-Lambda
- WAGO
- All Distributors
SMBJ3V3-E3/5B
Product Attributes
TYPE
DESCRIPTION
Breakdown Voltage
4.1 V
Clamping Voltage
10.3 V
Direction
Unidirectional
Element Configuration
Single
Leakage Current
200 µA
Max Operating Temperature
175 °C
Max Power Dissipation
600 W
Max Reverse Leakage Current
200 µA
Max Surge Current
100 A
Min Breakdown Voltage
4.1 V
Min Operating Temperature
-65 °C
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Number of Pins
2
Peak Pulse Current
200 A
Peak Pulse Power
600 W
Polarity
Unidirectional
Radiation Hardening
No
Reverse Breakdown Voltage
4.1 V
Reverse Standoff Voltage
3.3 V
RoHS
Non-Compliant
Schedule B
8541100080
Termination
SMD/SMT
Test Current
1 mA
Similar Products